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| GaAs SPDT Terminated Switch, DC - 3.0 GHz SW-442 SW-442 GaAs SPDT Terminated Switch DC - 3.0 GHz Features * * * * * Low Cost Plastic SOT-26 Package Low Insertion Loss <0.6 dB @ 900 MHz High Isolation >38 dB @ 900 MHz Low Power Consumption <10A @ +3V Positive or Negative 2.5 to 8 V Control SOT-26 Plastic Package Description M/A-COM's SW-442 is a GaAs monolithic switch in a low cost SOT-26 surface mount plastic package. The SW-442 is ideally suited for applications where very low power consumption, low insertion loss, very small size and low cost are required. Typical application is in dual band systems where switching between small signal components is required such as filter banks, single band LNA's, converters etc. The SW-442 can be used in applications up to 0.25 Watts in systems such as CDMA, W-CDMA, PCS, DCS1800, GSM and other analog/digital wireless communications systems. The SW-442 is fabricated using a mature 0.8 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. XX#Y PIN 1 Ordering Information Part Number SW-442 PIN SW-442TR SW-442RTR SW-442SMB Package SOT-26 Plastic Package 1 Forward Tape and Reel 1 Reverse Tape and Reel Sample Board Electrical Specifications TA = 25C Parameter Insertion Loss Test Conditions DC - 1 GHz 1- 2 GHz 2 - 3 GHz DC - 1 GHz 1 - 2 GHz 2 - 3 GHz DC - 2 GHz 2 - 3 GHz 500 MHz - 3 GHz 500 MHz - 3 GHz 1. Reference Application Note M513 for reel size information. Isolation Units dB dB dB dB dB dB Min. 36 25 21 VSWR P1dB (2.7V supply) P1dB (5V supply) IP2 (2.7V supply) IP3 (2.7V supply) Trise, Tfall Ton, Toff Transients Gate Leakage Typ. 0.5 0.8 1.1 38 28 22 1.4:1 1.6:1 24 28 80 50 40 60 10 6 Max. 0.7 1.0 1.25 1.5:1 1.7:1 dBm dBm dBm dBm ns ns mV A 2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone 2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone 10% to 90% RF, 90% to 10% RF 50% Control to 90% RF, Control to 10% RF In-Band VCTL = 2.5V 15 V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs SPDT Terminated Switch, DC - 3.0 GHz SW-442 Absolute Maximum Ratings Parameter Input Power (0.5 - 3.0 GHz) 3V Control 5V Control Operating Voltage Operating Temperature Storage Temperature 1 Functional Schematic Positive Control Voltage C=39pF C=100pF C=100pF Absolute Maximum +30 dBm +33 dBm +8.5 Volts -40C to +85C -65C to +150C V1 RFC V2 1. Exceeding any one or combination of these limits may cause permanent damage. RF1 GND RF2 PIN 1 Truth Table Mode (Control) Positive1 Negative 2 CGND C=39pF C=39pF V1 00.2V +2.5 to +8V 00.2V -2.5V to -8V V2 +2.5 to +8V 00.2V -2.5V to -8V 00.2V RFC - RF1 RFC - RF2 On Off Off On Off On On Off V1 RFC V2 Functional Schematic Negative Control Voltage 1. External DC blocking capacitors are required on all RF ports and GND. GND capacitors can be used with postive control voltage to resonate lead inductance for improved isolation. 2. If negative control is used, DC blocking capacitors and GND capacitors are not required. PIN Configuration PIN No. 1 2 3 4 5 6 Function RF1 GND RF2 V2 RFC V1 Description RF in/out RF Ground RF in/out V Control 2 RF COMMON V Control 1 PIN 1 RF1 GND RF2 Handling Procedures The following precautions should be observed to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. GaAs SPDT Terminated Switch, DC - 3.0 GHz SW-442 Typical Performance Curves Output VSWR vs. Frequency over Temperature Input VSWR vs. Frequency over Temperature 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 2 1.9 1.8 1.7 VSWR 1.6 1.5 1.4 1.3 1.2 1.1 1 VSWR +85C +25C -40C +85C +25C -40C 0 0.5 1 1.5 FREQUENCY (GHz) 2 2.5 3 0 0.5 1 1.5 FREQUENCY (GHz) 2 2.5 3 50 45 40 35 30 25 20 15 10 5 0 0 Isolation Loss vs. Frequency over Temperature (Postive Control) CGND=39pF CGND=8pF 60 55 50 45 40 35 30 25 20 15 10 0 Isolation Loss vs. Frequency over Temperature (Negative Control) ISOLATION (dB) 0.5 1 1.5 FREQUENCY (GHz) 2 2.5 3 ISOLATION (dB) 0.5 1 1.5 FREQUENCY (GHz) 2 2.5 3 3 INSERTION LOSS (dB) 2.5 2 1.5 1 0.5 0 0 Insertion Loss vs. Frequency over Temperature (Postive Control) INSERTION LOSS (dB) CGND=39pF CGND=8pF 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Insertion Loss vs. Frequency over Temperature (Negative Control) +25C +85C -40C 0.5 1 1.5 FREQUENCY (GHz) 2 2.5 3 0 0.5 1 1.5 FREQUENCY (GHz) 2 2.5 3 V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. |
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